Research Record

• Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS₂ Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit ACS NANO, 2025, v.19 no.2, 2458-2467
  SCIE Scopus dColl.
• Crystallinity-controlled volatility tuning of ZrO₂ memristor for physical reservoir computing INFOMAT, 2025, v.7 no.2
  SCIE Scopus dColl.
• Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe₂ with quasi van der Waals interface engineering SCIENCE ADVANCES, 2025, v.11 no.8, eads4573
  SCIE Scopus dColl.
• A study on pattern classifications with MoS2-based CTF synaptic device Journal of Alloys and Compounds, 2024, v.982, 173699
  SCIE Scopus dColl.
• An Ultralow Subthreshold Swing of 28 mV dec^-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide ACS APPLIED ELECTRONIC MATERIALS, 2024, v.6 no.8, 5489-5495
  SCIE Scopus dColl.
• Area-selective atomic layer deposition on 2D monolayer lateral superlattices Nature Communications, 2024, v.15 no.1, 2138
  SCIE Scopus dColl.
• Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth Advanced Functional Materials, 2024, v.34 no.23, 2312365
  SCIE Scopus dColl.
• Grain boundary control for high-reliability HfO2-based RRAM Chaos, Solitons and Fractals, 2024, v.183, 114956
  SCIE Scopus dColl.
• IGZO charge trap flash device for reconfigurable logic functions Applied Physics Letters, 2024, v.124 no.12, 123501
  SCIE Scopus dColl.
• Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing Neuromorphic Computing and Engineering, 2024, v.4 no.3, 34001
  Scopus dColl.
• Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts Advanced Functional Materials, 2024, v.34 no.44, 2407382
  SCIE Scopus dColl.
• Raman spectroscopy study of K-birnessite single crystals JOURNAL OF MATERIALS CHEMISTRY A, 2024, v.13 no.1, 617-626
  SCIE Scopus dColl.
• Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing Communications Materials, 2024, v.5 no.1, 51
  Scopus dColl.
• [학술지논문] Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit ACS NANO, 2025, v.19 no.2 , 2458-2467
  SCIE
• [학술지논문] Crystallinity-controlled volatility tuning of ZrO2 memristor for physical reservoir computing InfoMat, 2025, v.7 no.2 , 1-14
  SCIE
• [학술지논문] Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network FRONTIERS IN NEUROSCIENCE, 2025, v.19 no.0 , 1-16
  SCIE
• [학술지논문] Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array ACS NANO, 2025, v.19 no.5 , 5406-5417
  SCIE
• [학술지논문] Raman spectroscopy study of K-birnessite single crystals JOURNAL OF MATERIALS CHEMISTRY A, 2025, v.13 no.3 , 2336-2336
  SCIE
• [학술지논문] Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineering SCIENCE ADVANCES, 2025, v.11 no.8 , 1-11
  SCIE
• [학술지논문] A study on pattern classifications with MoS2-based CTF synaptic device JOURNAL OF ALLOYS AND COMPOUNDS, 2024, v.982 no.0 , 1-7
  SCIE
• [학술지논문] An Ultralow Subthreshold Swing of 28 mV dec-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide ACS APPLIED ELECTRONIC MATERIALS, 2024, v.6 no.8 , 5489-5495
  SCIE
• [학술지논문] Area-selective atomic layer deposition on 2D monolayer lateral superlattices NATURE COMMUNICATIONS, 2024, v.15 no.1 , 1-11
  SCIE
• [학술지논문] Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.23 , 1-13
  SCIE
• [학술지논문] Effects of voltage schemes on the conductance modulation of artificial synaptic device based on 2D hBN memristor: Its applications for pattern classifications CHAOS SOLITONS & FRACTALS, 2024, v.187 no.0 , 1-10
  SCIE
• [학술지논문] Grain boundary control for high-reliability HfO 2-based RRAM CHAOS SOLITONS & FRACTALS, 2024, v.183 no.0 , 1-8
  SCIE
• [학술지논문] IGZO charge trap flash device for reconfigurable logic functions APPLIED PHYSICS LETTERS, 2024, v.124 no.12 , 1-6
  SCIE
• [학술지논문] Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing Neuromorphic Computing and Engineering, 2024, v.4 no.3 , 1-8
  Scopus
• [학술지논문] Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.44 , 1-11
  SCIE
• [학술지논문] Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime ACS NANO, 2024, v.18 no.34 , 22965-22977
  SCIE
• [학술지논문] Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing Communications Materials, 2024, v.5 no.1 , 1-11
  Scopus
• [학술지논문] 신소재 기반 인공 신경 모사 소자 및 인공 신경망 개발 현황 The Magazine of the IEIE, 2024, v.51 no.3 , 16-28
• [학술발표] Adaptive Spiking Neural Network Neuromorphic Hardware for Interfacing Between Emerging Neuron and Synaptic Devices 2024 IEEE Biomedical Circuits and Systems Conference (BioCAS 2024), 중국, Xi'an, 2024-10-26 IEEE Biomedical Circuits and Systems (BIOCAS), 2024
• [학술발표] Impact of Synaptic Weight Variations on the Connection Strength between Artificial Neurons Based on 2D hBN Threshold Switching Memristors 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), 대한민국, 강릉, 2024-07-08 Proceedings of the AWAD 2024, 2024, 29-30
• [학술발표] Tunable Volatility in Crystallinity-Controlled ECM-based ZrO2 Memristors 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), 대한민국, 강릉, 2024-07-08 Proceedings of the AWAD 2024, 2024, 25-26

Academic Background

Work Experience