Hyung-Soon Shin Professor Emeritus
Professor Hyungsoon Shin was born in Seoul, Korea, in 1959. He received B.S. in electronics engineering from the Seoul National University in 1982, M.S. and Ph.D. in electrical engineering from the University of Texas at Austin in 1984 and 1990, respectively. From 1990 to 1994, he was with LG Semicon Co., Ltd., in Korea, where he worked on the development of DRAM, SRAM, and FLASH memory. In 1995, he left LG Semicon to join the faculty of the department of electronics engineering at Ewha Womans University, Seoul, Korea. Between 1996 and 1997, he served as the Director of Academic and Student Affairs in the College of Engineering. Between 2010 and 2011, he served as the Vice President for Office of Information and Communications. His research areas include new processes, devices, and circuit developments and modeling based on Si, both for high density memory and RF IC. He has published numerous journal articles on implant profile models, mobility models, nano-scale MOSFET structure analysis, hot-carrier degradation, alpha-particle-induced soft error, MRAM, and magneto-logic. He is a senior member of the Institute of Electrical and Electronics Engineers and a member of the Institute of Electronics Engineers of Korea. In 1991, he received the Technical Excellence Award from the Semiconductor Research Corporation (SRC).
Research Record
- A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory Materials, 2023, v.16 no.1, 182
- An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network IET CIRCUITS DEVICES & SYSTEMS, 2023, v.2023, 1052063
- Deep Neural Networks for Determining Subgap States of Oxide Thin-Film Transistors IEEE Access, 2023, v.11, 15909-15920
- Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, v.23 no.3, 189-195
- Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021, 2021 , 9369787
- Analysis of the transient body effect model for an LTPS TFT on a plastic substrate Solid-State Electronics, 2021, v.175, 107948
- Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM MICROMACHINES, 2021, v.12 no.10, 1209
- New simulation method for dependency of device degradation on bending direction and channel length Materials, 2021, v.14 no.20, 6167
- Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array IEEE ACCESS, 2021, v.9, 120901-120910
- Analysis of Organic Light-Emitting Diode SPICE Models with Constant or Voltage-Dependent Components JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8, 4773-4777
- Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM MICROMACHINES, 2020, v.11 no.11, 952
- Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM MICROMACHINES, 2020, v.11 no.2, 228
- Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8, 4920-4925
- Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8, 4730-4734
- Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation ELECTRONICS, 2020, v.9 no.9, 1446
- Optimization considerations for short channel poly-Si 1T-DRAM Electronics (Switzerland), 2020, v.9 no.6, 1-11
- A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency IEEE ELECTRON DEVICE LETTERS, 2019, v.40 no.4, 562-565
- Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method IEEE Transactions on Electron Devices, 2019, v.66 no.1, 759-765
- Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, v.34 no.10, 105007
- Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, v.19 no.10, 6703-6709
- Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect IEEE ELECTRON DEVICE LETTERS, 2019, v.40 no.4, 566-569
- Memristor Neural Network Training with Clock Synchronous Neuromorphic System MICROMACHINES, 2019, v.10 no.6
- Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, v.6 no.1, 1192-1196
- Analysis of read margin of crossbar array according to selector and resistor variation International Conference on Electronics, Information and Communication, ICEIC 2018, 2018, v.2018-January, 1-3
- New modeling method for the dielectric relaxation of a DRAM cell capacitor Solid-State Electronics, 2018, v.140, 29-33
- Read margin analysis of crossbar arrays using the cell-variability-aware simulation method Solid-State Electronics, 2018, v.140, 55-58
- A Guideline for electron mobility enhancement in uniaxially-strained (100)/(100) and (110)/(110) fin field effect transistors Journal of Nanoscience and Nanotechnology, 2017, v.17 no.5, 2999-3004
- A New Method for Determining the Subgap Density of States in n-/p-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistors JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, v.17 no.5, 2951-2958
- The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT Semiconductor Science and Technology, 2017, v.32 no.8
- A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation ACTIVE AND PASSIVE ELECTRONIC COMPONENTS, 2016, v.2016
- A new bias scheme for a low power consumption ReRAM crossbar array Semiconductor Science and Technology, 2016, v.31 no.8
- An analysis of the read margin and power consumption of crossbar ReRAM arrays IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2016, v.2016-January
- Analysis of stress effect on (110)-oriented single-gate SOI nMOSFETs using a silicon-thickness-dependent deformation potential Journal of Nanoscience and Nanotechnology, 2016, v.16 no.5, 5150-5154
- Analysis of the effect of the density of states on the characteristics of thin-film transistors IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2016, v.2016-January
- Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs Applied Physics Express, 2016, v.9 no.1
- Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, v.31 no.5
- Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array Japanese Journal of Applied Physics, 2016, v.55 no.4
- ReRAM Crossbar Array: Reduction of Access Time by Reducing the Parasitic Capacitance of the Selector Device IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, v.63 no.2, 873-876
- Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, v.63 no.10, 3914-3921
- Advanced Circuit-Level Model for Temperature-Sensitive Read/Write Operation of a Magnetic Tunnel Junction IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, v.62 no.2, 666-672
- Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, v.30 no.4
- Investigation of power dissipation for ReRAM in crossbar array architecture 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, 2015, 27-29 Oct 2014
- Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal Electronics Letters, 2014, v.50 no.15, 1093-1095
- Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs SOLID-STATE ELECTRONICS, 2014, v.94, 23-27
- Substrate Doping Concentration Dependence of Electron Mobility Enhancement in Uniaxial Strained (110)/< 110 > nMOSFETs JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, v.14 no.5, 518-524
- Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, v.14 no.2, 146-152
- Unified Analytical Model for Switching Behavior of Magnetic Tunnel Junction IEEE ELECTRON DEVICE LETTERS, 2014, v.35 no.2, 193-195
- [학술지논문] A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory MATERIALS, 2023, v.16 no.1 , 182-182
- [학술지논문] Deep Neural Networks for Determining Subgap States of Oxide Thin-Film Transistors IEEE ACCESS, 2023, v.11 no.1 , 15909-15920
- [학술지논문] Analysis of the transient body effect model for an LTPS TFT on a plastic substrate SOLID-STATE ELECTRONICS, 2021, v.175 no.1 , 107948-107948
- [학술지논문] New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length MATERIALS, 2021, v.14 no.20 , 6167-6167
- [학술지논문] Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array IEEE ACCESS, 2021, v.9 no.0 , 120901-120910
- [학술지논문] Analysis of Organic Light-Emitting Diode SPICE Models with Constant or Voltage-Dependent Components JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8 , 4773-4777
- [학술지논문] Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM MICROMACHINES, 2020, v.11 no.11 , 952-952
- [학술지논문] Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM MICROMACHINES, 2020, v.11 no.2 , 228-228
- [학술지논문] Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8 , 4920-4925
- [학술지논문] Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, v.20 no.8 , 4730-4734
- [학술지논문] Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation ELECTRONICS, 2020, v.9 no.9 , 1446-1446
- [학술지논문] Optimization Considerations for Short Channel Poly-Si 1T-DRAM ELECTRONICS, 2020, v.9 no.6 , 1051-1051
Courses
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2024-2nd
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Semiconductor Engineering Ⅰ
- Subject No 35322Class No 01
- 2Year ( 3Credit , 3Hour) Mon 5~5 (ENG A) , Wed 4~4 (101)
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Smart Sensor Semiconductor Devices
- Subject No G14685Class No 01
- Year ( 3Credit , 3Hour) Mon 2~3 (ENG A521)
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Smart Sensor Semiconductor Devices
- Subject No G18568Class No 01
- Year ( 3Credit , 3Hour) Mon 2~3 (ENG A521)
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2024-1st
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Semiconductor Engineering Ⅱ
- Subject No 35324Class No 01
- 3Year ( 3Credit , 3Hour) Mon 5~5 (ENG A) , Wed 4~4 (101)
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Topics in Smart IIoT Semiconductor
- Subject No G18153Class No 01
- Year ( 3Credit , 3Hour) Mon 2~3 (ENG A521)
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Topics in Smart IIoT Semiconductor
- Subject No G18593Class No 01
- Year ( 3Credit , 3Hour) Mon 2~3 (ENG A521)
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2023-1st
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Semiconductor Engineering II 강의 계획서 상세보기
- Subject No 35324Class No 01
- 3Year ( 3Credit , 3Hour) Mon 5~5 (ENG ) , Wed 4~4 (159)
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Topics in Smart IIoT Semiconductor
- Subject No G18153Class No 01
- Year ( 3Credit , 3Hour) Mon 2~3 (ENG A521)
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2022-2nd
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Semiconductor Engineering I
- Subject No 35322Class No 01
- 2Year ( 3Credit , 3Hour) Mon 4~4 (ENG ) , Thu 5~5 (161)
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Human Centric Semiconductor Devices
- Subject No G18152Class No 01
- Year ( 3Credit , 3Hour) Thu 2~3 (ENG A521)
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2022-1st
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Semiconductor Engineering II
- Subject No 35324Class No 01
- 3Year ( 3Credit , 3Hour) Tue 2~2 , Fri 3~3
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Topics in Smart IIoT Semiconductor
- Subject No G18153Class No 01
- Year ( 3Credit , 3Hour) Wed 2~3 (-)
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Academic Background
Seoul Nat'l Univ. 공학사(전자공학)
University of Texas at Austin Ph.D.(전자 및 전산기공학)
University of Texas at Austin M.S.(전자 및 전산기공학)