이화여자대학교

서동석 프로필 사진
Professor Dongseok Suh has been with the Department of Physics at Ewha Womans University in Korea since 2023, where he conducts research on nanoelectronic devices based on low-dimensional nanomaterials, quantum physical phenomena, and advanced semiconductor technologies. In the era of artificial intelligence, his research focuses on developing new semiconductor information-processing device platforms for AI hardware accelerators and neuromorphic devices.

Before joining Ewha Womans University, Professor Suh was part of the Department of Energy Science at Sungkyunkwan University, Korea, from 2013 to 2022. There, he carried out research on CNT-superconductor systems, ferroelectric–two-dimensional material heterojunction devices, and applications of the graphene quantum Hall effect through various government- and industry-funded projects.

He also worked at Samsung Electronics, including the Samsung Advanced Institute of Technology and the Semiconductor Research Center, from 2003 to 2011, focusing on phase-change memory (PcRAM), resistive random-access memory (ReRAM), and ToF image sensors. In addition, he conducted carbon nanotube research at the University of Texas at Dallas, USA, during 2002–2003 and 2011–2013. Professor Suh received his B.S., M.S., and Ph.D. degrees in Physics from Seoul National University in Korea from 1992 to 2002.

He has served as an Ewha Fellow for the periods of 2023–2025 and 2026–2028.
  • energy.suh@ewha.ac.kr
  • Science Building A #A523
  • 02-3277-3443
  • Office hours
    • Mon 3:20-4pm ; Tue 3:20-4pm ; Thu 3:20-4pm
  • Research Interests
    • Logic / Memory / Neuromorphic Computing Device, Quantum Charge Transport Phenomena, Carbon Nanotube Nanofibrillar Network / Sheet / Yarn, Graphene / 2-Dimensional Semiconductor Device, Device Physics for next-generator AI hardware accelerator
  • sdg09
Research Record
  • Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer ADVANCED ELECTRONIC MATERIALS, 2025, v.11 no.6
    SCIE Scopus dColl.
  • High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2 ACS NANO, 2025, v.19 no.18, 17503-17513
    SCIE Scopus dColl.
  • Ion-Induced Phase Changes in 2D MoTe2 Films for Neuromorphic Synaptic Device Applications ACS NANO, 2025, v.19 no.2, 2529-2539
    SCIE Scopus dColl.
  • Reduced graphene oxide composite fiber with hierarchical pores for all-solid-state fiber supercapacitors CARBON, 2025, v.234, 119998
    SCIE Scopus dColl.
  • Effect of Self-Incandescent Heating on Superconducting NbN Nanowire Yarn ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.52
    SCIE Scopus dColl.
  • Electrical Tracking of the Mott Insulating Kitaev Magnet using Graphene/α-RuCl3 Heterostructure Advanced Functional Materials, 2024, v.34 no.16, 2306964
    SCIE Scopus dColl.
  • Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure Advanced Functional Materials, 2024, v.34 no.11, 2311287
    SCIE Scopus dColl.
  • Highly stretchable conductor with elastomeric passivation sheath enabling applications in harsh conditions Materials Chemistry and Physics, 2024, v.315, 128967
    SCIE Scopus dColl.
  • Integrated Electrostimulation Cell Culture Systems Driven by Chemically Modified Twistron Mechanical Energy Harvesting Electrodes Advanced Functional Materials, 2024, v.34 no.33, 2315279
    SCIE Scopus dColl.
  • Synergistic actuation performance of artificial fern muscle with a double nanocarbon structure Materials Today Advances, 2024, v.21, 100459
    SCIE Scopus dColl.
  • Understanding Piezoionic Effects in Chemo–Mechanical Energy Harvesting by Carbon Nanotube Yarn Twists Advanced Energy Materials, 2024, v.14 no.10, 2303343
    SCIE Scopus dColl.
  • Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal Advanced Electronic Materials, 2023, v.9 no.12, 2300339
    SCIE Scopus dColl.
  • [학술지논문] Self-Incandescent Heating-Driven Microstructural Consolidation of Biscrolled Cu/CNT Yarns for Reduced Frequency-Dependent AC Resistance SMALL METHODS, 2026, v.1 no.1 , 1-1
    SCIE
  • [학술지논문] High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2 ACS NANO, 2025, v.19 no.18 , 17503-17513
    SCIE
  • [학술지논문] Ion-Induced Phase Changes in 2D MoTe2 Films for Neuromorphic Synaptic Device Applications ACS NANO, 2025, v.19 no.2 , 2529-2539
    SCIE
  • [학술지논문] Effect of Self-Incandescent Heating on Superconducting NbN Nanowire Yarn ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.52 , 241107-241107
    SCIE
  • [학술지논문] Electrical Tracking of the Mott Insulating Kitaev Magnet using Graphene/α-RuCl3 Heterostructure ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.16 , 230696-230696
    SCIE
  • [학술지논문] Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.11 , 2311287-2311287
    SCIE
  • [학술지논문] Highly stretchable conductor with elastomeric passivation sheath enabling applications in harsh conditions MATERIALS CHEMISTRY AND PHYSICS, 2024, v.315 no.1 , 128967-128967
    SCIE
  • [학술지논문] Large-Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystal ADVANCED ELECTRONIC MATERIALS, 2023, v.9 no.12 , 230033-230033
    SCIE
Courses
  • 2026-1st

  • 2025-2nd

    • Physics Laboratory IV 강의 계획서 상세보기

      • Subject No 20515Class No 01
      • 3Year ( 2Credit , 3Hour) Wed 5~6 (D)
    • Mechanics Ⅱ

      • Subject No 20519Class No 01
      • 2Year ( 3Credit , 3Hour) Mon 3~3 (SCI-AA) , Wed 2~2 (102)
      • Major Requisite
    • Semiconductor Physics and Nano Physics 강의 계획서 상세보기

      • Subject No 35992Class No 01
      • 4Year ( 3Credit , 3Hour) Mon 5~5 (POSCO366) , Wed 4~4 (POSCO366)
  • 2025-1st

  • 2024-2nd

  • 2024-1st

  • 2023-2nd

    • Mechanics II 강의 계획서 상세보기

      • Subject No 20519Class No 01
      • 2Year ( 3Credit , 3Hour) Mon 4~4 (POSCO366) , Thu 5~5 (POSCO366)
      • Major Requisite
    • General Physics

      • Subject No 30001Class No 01
      • 1Year ( 3Credit , 3Hour) Mon 2~2 (SCI-AA) , Thu 3~3 (101)
  • 2023-1st

Academic Background

Seoul Nat'l Univ. 이학박사(물리학과)

Seoul Nat'l Univ. 이학석사(물리학과)

Seoul Nat'l Univ. 이학사(물리학과)

Work Experience

성균관대 2013-03-01 ~ 2023-02-28

Univ. of Texas at Dallas 2011-02-01 ~ 2013-01-31

삼성전자(종합기술원, 반도체연구소) 2003-12-01 ~ 2011-01-31

Internal Awards

이화펠로우2026-03-01

이화펠로우2023-03-01