곽준영(郭俊榮) 부교수

지능형반도체공학전공 /전자전기공학전공 /스마트팩토리융합전공[대학원]

곽준영 프로필 사진
곽준영 교수는 이화여자대학교 공과대학 지능형반도체공학전공 소속으로 재직 중이다. 미국 Cornell University에서 학위를 받았으며, 주요 경력으로는 삼성전자 반도체에서 선임연구원으로 근무하며 플래시메모리 아날로그 회로설계 업무 수행, 미국 Intel Corporation에서 Senior Device Engineer로 근무하며 반도체 소자 및 공정 연구 수행, 한국과학기술연구원(KIST)에서 책임연구원으로 근무하며 뉴로모픽 인공지능 반도체 소자 및 회로 연구 수행 등이 있다. 
현재 관심 연구 분야로는 1) 차세대 인공지능 반도체 소자 연구, 2) 제작한 소자 어레이를 구동하기위한 아날로그 회로 설계 연구, 그리고 3) 이들을 융합한 새로운 시스템 개발 등이 있다.
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  • 연구관심분야
    • 반도체 소자 및 공정, 2차원 소재 및 소자, 뉴로모픽 인공지능 반도체, 아날로그 회로 설계, 소자 및 회로 융합
연구실적
  • Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit ACS NANO, 2025, v.19 no.2, 2458-2467
    SCIE Scopus dColl.
  • Crystallinity-controlled volatility tuning of ZrO2 memristor for physical reservoir computing INFOMAT, 2025, v.7 no.2
    SCIE Scopus dColl.
  • Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineering SCIENCE ADVANCES, 2025, v.11 no.8, eads4573
    SCIE Scopus dColl.
  • A study on pattern classifications with MoS2-based CTF synaptic device Journal of Alloys and Compounds, 2024, v.982, 173699
    SCIE Scopus dColl.
  • An Ultralow Subthreshold Swing of 28 mV dec-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide ACS APPLIED ELECTRONIC MATERIALS, 2024, v.6 no.8, 5489-5495
    SCIE Scopus dColl.
  • Area-selective atomic layer deposition on 2D monolayer lateral superlattices Nature Communications, 2024, v.15 no.1, 2138
    SCIE Scopus dColl.
  • Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth Advanced Functional Materials, 2024, v.34 no.23, 2312365
    SCIE Scopus dColl.
  • Grain boundary control for high-reliability HfO2-based RRAM Chaos, Solitons and Fractals, 2024, v.183, 114956
    SCIE Scopus dColl.
  • IGZO charge trap flash device for reconfigurable logic functions Applied Physics Letters, 2024, v.124 no.12, 123501
    SCIE Scopus dColl.
  • Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing Neuromorphic Computing and Engineering, 2024, v.4 no.3, 34001
    Scopus dColl.
  • Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts Advanced Functional Materials, 2024, v.34 no.44, 2407382
    SCIE Scopus dColl.
  • Raman spectroscopy study of K-birnessite single crystals JOURNAL OF MATERIALS CHEMISTRY A, 2024, v.13 no.1, 617-626
    SCIE Scopus dColl.
  • Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing Communications Materials, 2024, v.5 no.1, 51
    Scopus dColl.
  • [학술지논문] Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit ACS NANO, 2025, v.19 no.2 , 2458-2467
    SCIE
  • [학술지논문] Crystallinity-controlled volatility tuning of ZrO2 memristor for physical reservoir computing InfoMat, 2025, v.7 no.2 , 1-14
    SCIE
  • [학술지논문] Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network FRONTIERS IN NEUROSCIENCE, 2025, v.19 no.0 , 1-16
    SCIE
  • [학술지논문] Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array ACS NANO, 2025, v.19 no.5 , 5406-5417
    SCIE
  • [학술지논문] Raman spectroscopy study of K-birnessite single crystals JOURNAL OF MATERIALS CHEMISTRY A, 2025, v.13 no.3 , 2336-2336
    SCIE
  • [학술지논문] Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineering SCIENCE ADVANCES, 2025, v.11 no.8 , 1-11
    SCIE
  • [학술지논문] A study on pattern classifications with MoS2-based CTF synaptic device JOURNAL OF ALLOYS AND COMPOUNDS, 2024, v.982 no.0 , 1-7
    SCIE
  • [학술지논문] An Ultralow Subthreshold Swing of 28 mV dec-1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium-Aluminum Oxide Gate Oxide ACS APPLIED ELECTRONIC MATERIALS, 2024, v.6 no.8 , 5489-5495
    SCIE
  • [학술지논문] Area-selective atomic layer deposition on 2D monolayer lateral superlattices NATURE COMMUNICATIONS, 2024, v.15 no.1 , 1-11
    SCIE
  • [학술지논문] Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.23 , 1-13
    SCIE
  • [학술지논문] Effects of voltage schemes on the conductance modulation of artificial synaptic device based on 2D hBN memristor: Its applications for pattern classifications CHAOS SOLITONS & FRACTALS, 2024, v.187 no.0 , 1-10
    SCIE
  • [학술지논문] Grain boundary control for high-reliability HfO 2-based RRAM CHAOS SOLITONS & FRACTALS, 2024, v.183 no.0 , 1-8
    SCIE
  • [학술지논문] IGZO charge trap flash device for reconfigurable logic functions APPLIED PHYSICS LETTERS, 2024, v.124 no.12 , 1-6
    SCIE
  • [학술지논문] Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing Neuromorphic Computing and Engineering, 2024, v.4 no.3 , 1-8
    Scopus
  • [학술지논문] Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.44 , 1-11
    SCIE
  • [학술지논문] Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime ACS NANO, 2024, v.18 no.34 , 22965-22977
    SCIE
  • [학술지논문] Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing Communications Materials, 2024, v.5 no.1 , 1-11
    Scopus
  • [학술지논문] 신소재 기반 인공 신경 모사 소자 및 인공 신경망 개발 현황 The Magazine of the IEIE, 2024, v.51 no.3 , 16-28
  • [학술발표] Adaptive Spiking Neural Network Neuromorphic Hardware for Interfacing Between Emerging Neuron and Synaptic Devices 2024 IEEE Biomedical Circuits and Systems Conference (BioCAS 2024), 중국, Xi'an, 2024-10-26 IEEE Biomedical Circuits and Systems (BIOCAS), 2024
  • [학술발표] Impact of Synaptic Weight Variations on the Connection Strength between Artificial Neurons Based on 2D hBN Threshold Switching Memristors 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), 대한민국, 강릉, 2024-07-08 Proceedings of the AWAD 2024, 2024, 29-30
  • [학술발표] Tunable Volatility in Crystallinity-Controlled ECM-based ZrO2 Memristors 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), 대한민국, 강릉, 2024-07-08 Proceedings of the AWAD 2024, 2024, 25-26
강의
  • 2025-1학기

    • 반도체공학Ⅱ

      • 학수번호 35324분반 01
      • 3학년 ( 3학점 , 3시간) 수 7~7 (공대강당) , 금 7~7 (공대강당)
      • 영어강의
    • 인공지능반도체특론 강의 계획서 상세보기

      • 학수번호 G18889분반 01
      • 학년 ( 3학점 , 3시간) 화 7~8 (공학)
    • 인공지능반도체특론 강의 계획서 상세보기

      • 학수번호 G18896분반 01
      • 학년 ( 3학점 , 3시간) 화 7~8 (공학)
  • 2024-2학기

    • 기초회로실험

      • 학수번호 35325분반 01
      • 2학년 ( 2학점 , 3시간) 월 6~7 (공학A422)
      • 영어강의
    • 기초회로실험

      • 학수번호 35325분반 02
      • 2학년 ( 2학점 , 3시간) 수 6~7 (공학A422)
      • 영어강의
    • 공학수학 강의 계획서 상세보기

      • 학수번호 36341분반 02
      • 1학년 ( 3학점 , 3시간) 화 5~5 (공학) , 목 6~6 (161)
      • 융합전자반도체 1학년 /호크마
  • 2024-1학기

    • 디지털공학 강의 계획서 상세보기

      • 학수번호 30266분반 01
      • 2학년 ( 3학점 , 3시간) 화 2~2 (공대강당) , 금 3~3 (공대강당)
    • 전자공학종합설계

      • 학수번호 36565분반 01
      • 4학년 ( 3학점 , 3시간) 금 6~7 (공학A107)
      • 언어변경,영어강의
학력

Cornell University Ph.D.(Electrical and Computer Engineering)

경력

한국과학기술연구원(KIST) 2017-10-01 ~ 2024-02-29

Intel Corporation 2015-07-06 ~ 2017-08-15

삼성전자 2005-08-01 ~ 2009-07-15