곽준영 교수는 이화여자대학교 공과대학 지능형반도체공학전공 소속으로 재직 중이다. 미국 Cornell University에서 학위를 받았으며, 주요 경력으로는 삼성전자 반도체에서 선임연구원으로 근무하며 플래시메모리 아날로그 회로설계 업무 수행, 미국 Intel Corporation에서 Senior Device Engineer로 근무하며 반도체 소자 및 공정 연구 수행, 한국과학기술연구원(KIST)에서 책임연구원으로 근무하며 뉴로모픽 인공지능 반도체 소자 및 회로 연구 수행 등이 있다.
현재 관심 연구 분야로는 1) 차세대 인공지능 반도체 소자 연구, 2) 제작한 소자 어레이를 구동하기위한 아날로그 회로 설계 연구, 그리고 3) 이들을 융합한 새로운 시스템 개발 등이 있다.
Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineeringSCIENCE ADVANCES, 2025, v.11 no.8, eads4573
Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processingNeuromorphic Computing and Engineering, 2024, v.4 no.3, 34001
Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 ContactsAdvanced Functional Materials, 2024, v.34 no.44, 2407382
Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computingCommunications Materials, 2024, v.5 no.1, 51
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, 1-16
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[학술지논문] Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineering
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[학술지논문] Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts
ADVANCED FUNCTIONAL MATERIALS, 2024, v.34
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[학술지논문] Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime
ACS NANO, 2024, v.18
no.34
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[학술지논문] Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing
Communications Materials, 2024, v.5
no.1
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Scopus
[학술지논문] 신소재 기반 인공 신경 모사 소자 및 인공 신경망 개발 현황
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[학술발표] Adaptive Spiking Neural Network Neuromorphic Hardware for Interfacing Between Emerging Neuron and Synaptic Devices2024 IEEE Biomedical Circuits and Systems Conference (BioCAS 2024), 중국, Xi'an, 2024-10-26
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[학술발표] Impact of Synaptic Weight Variations on the Connection Strength between Artificial Neurons Based on 2D hBN Threshold Switching Memristors2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), 대한민국, 강릉, 2024-07-08
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