이화여자대학교

서동석(徐東碩) 교수

물리학과 /호크마교양대학

서동석 프로필 사진 
Professor Dongseok Suh has been with the Department of Physics at Ewha Womans University in Korea since 2023, where his research lab delves into the development of nanoelectronic devices. These devices are grounded in the use of low-dimensional nanomaterials and the latest semiconductor technologies. With the advent of the artificial intelligence era, his lab is set to focus on the research and development of nanoelectronic devices for AI hardware accelerators, employing a mix of nanomaterials and quantum physical phenomena for their realization.

Before joining Ewha Womans University, Professor Suh was part of the Department of Energy Science at Sungkyunkwan University, Korea, from 2013 to 2022. He also spent seven years working at Samsung Electronics in the Samsung Advanced Institute of Technology and the Semiconductor Research Center, concentrating on phase-change memory and time-of-flight image sensor. Additionally, he devoted three years to researching carbon nanotubes at the NanoTech Institute, University of Texas at Dallas, USA. Professor Suh's academic credentials include B.S., M.S., and Ph.D. degrees in Physics, all obtained from Seoul National University in Korea from 1992 to 2002.
  • 진선미관 237호
  • 02-3277-3443
  • 면담 가능시간
    • Mon 3:30-4:30pm ; Wed 2-4pm
연구실적
  • Ion-Induced Phase Changes in 2D MoTe2 Films for Neuromorphic Synaptic Device Applications ACS NANO, 2025, v.19 no.2, 2529-2539
    SCIE Scopus dColl.
  • Reduced graphene oxide composite fiber with hierarchical pores for all-solid-state fiber supercapacitors CARBON, 2025, v.234, 119998
    SCIE Scopus dColl.
  • Effect of Self-Incandescent Heating on Superconducting NbN Nanowire Yarn ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.52
    SCIE Scopus dColl.
  • Electrical Tracking of the Mott Insulating Kitaev Magnet using Graphene/α-RuCl3 Heterostructure Advanced Functional Materials, 2024, v.34 no.16, 2306964
    SCIE Scopus dColl.
  • Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure Advanced Functional Materials, 2024, v.34 no.11, 2311287
    SCIE Scopus dColl.
  • Highly stretchable conductor with elastomeric passivation sheath enabling applications in harsh conditions Materials Chemistry and Physics, 2024, v.315, 128967
    SCIE Scopus dColl.
  • Integrated Electrostimulation Cell Culture Systems Driven by Chemically Modified Twistron Mechanical Energy Harvesting Electrodes Advanced Functional Materials, 2024, v.34 no.33, 2315279
    SCIE Scopus dColl.
  • Synergistic actuation performance of artificial fern muscle with a double nanocarbon structure Materials Today Advances, 2024, v.21, 100459
    SCIE Scopus dColl.
  • Understanding Piezoionic Effects in Chemo–Mechanical Energy Harvesting by Carbon Nanotube Yarn Twists Advanced Energy Materials, 2024, v.14 no.10, 2303343
    SCIE Scopus dColl.
  • Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal Advanced Electronic Materials, 2023, v.9 no.12, 2300339
    SCIE Scopus dColl.
  • [학술지논문] Ion-Induced Phase Changes in 2D MoTe2 Films for Neuromorphic Synaptic Device Applications ACS NANO, 2025, v.19 no.2 , 2529-2539
    SCIE
  • [학술지논문] Effect of Self-Incandescent Heating on Superconducting NbN Nanowire Yarn ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.52 , 241107-241107
    SCIE
  • [학술지논문] Electrical Tracking of the Mott Insulating Kitaev Magnet using Graphene/α-RuCl3 Heterostructure ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.16 , 230696-230696
    SCIE
  • [학술지논문] Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure ADVANCED FUNCTIONAL MATERIALS, 2024, v.34 no.11 , 2311287-2311287
    SCIE
  • [학술지논문] Highly stretchable conductor with elastomeric passivation sheath enabling applications in harsh conditions MATERIALS CHEMISTRY AND PHYSICS, 2024, v.315 no.1 , 128967-128967
    SCIE
  • [학술지논문] Large-Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystal ADVANCED ELECTRONIC MATERIALS, 2023, v.9 no.12 , 230033-230033
    SCIE
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